Materials
Increasing potential for the future
Non-oxide ceramics
Increasing potential for the future
Non-oxide ceramics such as nitrides, carbides, borides are primarily different from the oxide ceramics because of their much better to very good electrical conductivity and their high degree of hardness. At the moment, the non-oxide ceramic targets are a niche product for many customers; however they have increasing potential for the future due to their special properties. The requirements for the production of non-oxide ceramics are considerable, however. For example, targets such as B4C, TiB2 or similar require a high-temperature technique, some with temperatures of over 2000°C.
In order to be able to manufacture the whole range of this material, we use production techniques such as sintering, hot pressing or HIP. This means that the company is capable of fulfilling all the previously set requirements for targets. Thanks to extensive experience as well as the whole value chain based in house, we can secure the highest quality as well as optimum service for our customers.
The dimensions and geometric design should be determined together in advance. Sputter target measurements according to your wishes and drawings.
In order to be able to manufacture the whole range of this material, we use production techniques such as sintering, hot pressing or HIP. This means that the company is capable of fulfilling all the previously set requirements for targets. Thanks to extensive experience as well as the whole value chain based in house, we can secure the highest quality as well as optimum service for our customers.
The dimensions and geometric design should be determined together in advance. Sputter target measurements according to your wishes and drawings.
| Material sputter target | planar bonded | Chemical formula | Purity (%) | Density (g/cm³) | Melting point (°C) | Molar mass (g/mol) |
|---|---|---|---|---|---|---|
| Boron carbide | • | B4C | 99.9 | 2.52 | 2350 | 55.2 |
| Lanthanum hexaboride | • | LaB6 | 99.9 | 4,72 | 2210 | 203.76 |
| Molybdenum silicide | • | MoSi2 | 99.9 | 6.31 | 1920 | 152.1 |
| Molybdenum sulphide | • | MoS2 | 99.9 | 5.06 | 450 | 160 |
| Silicon carbide | • | SiC | 99.9 | 3.16 | 2700 | 40.1 |
| Silicon nitride | • | Si3N4 | 99 | 3.2 | 1900 | 140.24 |
| Titanium boride | • | TiB2 | 99.9 | 4.38 | 3225 | 69.48 |
| Titanium carbide | • | TiC | 99.5 | 4.93 | 3140 | 59.88 |
| Titanium nitride | • | TiN | 99.5 | 5.22 | 2950 | 81.88 |
| Titanium silicide | • | TiSi2 | 99.9 | 4.39 | 1540 | 105.04 |
| Tungsten carbide | • | WC | 99.9 | 15.63 | 2800 | 195.85 |
| Zircon boride | • | ZrB2 | 99.5 | 6.09 | 3000 | 112.84 |
